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1 August 2016 Next-generation performance of SAPHIRA HgCdTe APDs
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We present the measured characteristics of the most recent iteration of SAPHIRA HgCdTe APD arrays, and with suppressed glow show them to be capable of a baseline dark current of 0:03e-/s. Under high bias voltages the device also reaches avalanche gains greater than 500. The application of a high temperature anneal during production shows great improvements to cosmetic performance and moves the SAPHIRA much closer to being science grade arrays. We also discuss investigations into photon counting and ongoing telescope deployments of the SAPHIRA with UH-IfA.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dani E. Atkinson, Donald N. B. Hall, Ian M. Baker, Sean B. Goebel, Shane M. Jacobson, Charles Lockhart, and Eric A. Warmbier "Next-generation performance of SAPHIRA HgCdTe APDs", Proc. SPIE 9915, High Energy, Optical, and Infrared Detectors for Astronomy VII, 99150N (1 August 2016);

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