Validation of NIEL for >1MeV electrons in silicon using the CCD47-20

B. Dryer; P. H. Smith; T. Nuns; N. J. Murray; K. D. Stefanov; J. P. D. Gow; R. Burgon; D. J. Hall; A. D. Holland

doi:10.1117/12.2233975

19 October 2016 Validation of NIEL for >1MeV electrons in silicon using the CCD47-20

B. Dryer, P. H. Smith, T. Nuns, N. J. Murray, K. D. Stefanov, J. P. D. Gow, R. Burgon, D. J. Hall, A. D. Holland

Proceedings Volume 9915, High Energy, Optical, and Infrared Detectors for Astronomy VII; 991531 (2016) https://doi.org/10.1117/12.2233975
Event: SPIE Astronomical Telescopes + Instrumentation, 2016, Edinburgh, United Kingdom

Abstract

For future space missions that are visiting hostile electron radiation environments, such as ESA’s JUICE mission, it is important to understand the effects of electron irradiation on silicon devices. This paper outlines a study to validate and improve upon the Non-Ionising Energy Loss (NIEL) model for high energy electrons in silicon using Charge Coupled Devices (CCD), CMOS Imaging Sensors (CIS) and PIPS photodiodes. Initial results of radiation effects in an e2v technologies CCD47-20 after irradiation to 10 krad of 1 MeV electrons are presented with future results and analysis to be presented in future publications.

Citation Download Citation

B. Dryer, P. H. Smith, T. Nuns, N. J. Murray, K. D. Stefanov, J. P. D. Gow, R. Burgon, D. J. Hall, and A. D. Holland "Validation of NIEL for >1MeV electrons in silicon using the CCD47-20", Proc. SPIE 9915, High Energy, Optical, and Infrared Detectors for Astronomy VII, 991531 (19 October 2016); https://doi.org/10.1117/12.2233975

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