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The study results revealed that, firstly, the level of input SHF power is responsible for the intensity of ionization processes at the outer boundary of the plasma; the potential supplied to the product is responsible for generating a compensated flow at the inner boundary of the plasma, and secondly, the processes occurring in the plasma must be controlled. This will ensure consistency of the desired speed and, consequently, the degree of surface heating within a set time, and, on this basis, the increase in the reproducibility of the composite structure synthesis in the surface layer of parts or products, including structures with desired properties. |
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Cited by 1 scholarly publication.
