Paper
27 September 2016 Integration of a niobium oxide selector on a tantalum oxide memristor by local oxidation using Joule heating
Juan J. Díaz León, Kate J. Norris, John F. Sevic, Nobuhiko P. Kobayashi
Author Affiliations +
Abstract
Memristive devices are two-terminal electrical switches with electrical resistance that depends on a state variable equivalent to electrical charge. In practice, multiple memristive devices are arranged into a crossbar array to form such components as memory and logic. For reliable operation of the crossbar array, electrical current sneak paths need to be eliminated by combining a highly nonlinear component, known as selector, with a memristive device. This ensures the explicit selection of an intended memristive device without disturbing the states of surrounding devices. However, integrating a selector onto a memristive device at the circuit level is not an appealing option for large scale integration. In this paper, a monolithic structure that contains a memristive device and a self-aligned selector is presented. A niobium oxide (NbO2) selector is built directly on a tantalum oxide (TaOx) memristive device by fist depositing an Nb layer on a TaOx memristive device and then forming NbO2 at the Nb/TaOx interface. Discussion will focus on an experimental and theoretical assessment on the electrothermal behavior of the Nb/TaOx structure that results in NbO2/TaOx selector/memristive devices.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Juan J. Díaz León, Kate J. Norris, John F. Sevic, and Nobuhiko P. Kobayashi "Integration of a niobium oxide selector on a tantalum oxide memristor by local oxidation using Joule heating", Proc. SPIE 9924, Low-Dimensional Materials and Devices 2016, 99240I (27 September 2016); https://doi.org/10.1117/12.2239609
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication and 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Niobium

Oxides

Tantalum

Tin

Oxidation

Resistance

Ions

RELATED CONTENT


Back to Top