Integration of a niobium oxide selector on a tantalum oxide memristor by local oxidation using Joule heating

Juan J. Díaz León; Kate J. Norris; John F. Sevic; Nobuhiko P. Kobayashi

doi:10.1117/12.2239609

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27 September 2016 Integration of a niobium oxide selector on a tantalum oxide memristor by local oxidation using Joule heating

Juan J. Díaz León, Kate J. Norris, John F. Sevic, Nobuhiko P. Kobayashi

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Proceedings Volume 9924, Low-Dimensional Materials and Devices 2016; 99240I (2016) https://doi.org/10.1117/12.2239609
Event: SPIE Nanoscience + Engineering, 2016, San Diego, California, United States

Abstract

Memristive devices are two-terminal electrical switches with electrical resistance that depends on a state variable equivalent to electrical charge. In practice, multiple memristive devices are arranged into a crossbar array to form such components as memory and logic. For reliable operation of the crossbar array, electrical current sneak paths need to be eliminated by combining a highly nonlinear component, known as selector, with a memristive device. This ensures the explicit selection of an intended memristive device without disturbing the states of surrounding devices. However, integrating a selector onto a memristive device at the circuit level is not an appealing option for large scale integration. In this paper, a monolithic structure that contains a memristive device and a self-aligned selector is presented. A niobium oxide (NbO₂) selector is built directly on a tantalum oxide (TaO_x) memristive device by fist depositing an Nb layer on a TaO_x memristive device and then forming NbO₂ at the Nb/TaO_x interface. Discussion will focus on an experimental and theoretical assessment on the electrothermal behavior of the Nb/TaO_x structure that results in NbO2/TaO_x selector/memristive devices.

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Juan J. Díaz León, Kate J. Norris, John F. Sevic, and Nobuhiko P. Kobayashi "Integration of a niobium oxide selector on a tantalum oxide memristor by local oxidation using Joule heating", Proc. SPIE 9924, Low-Dimensional Materials and Devices 2016, 99240I (27 September 2016); https://doi.org/10.1117/12.2239609

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