High Accuracy Determination Of Semiconductor Substrate And Waveguide Refractive Index By Prism Coupling

S. Morasca; C. De Bernardi

doi:10.1117/12.960084

6 December 1988 High Accuracy Determination Of Semiconductor Substrate And Waveguide Refractive Index By Prism Coupling

S. Morasca, C. De Bernardi

Proceedings Volume 0993, Integrated Optical Circuit Engineering VI; (1988) https://doi.org/10.1117/12.960084
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States

Abstract

Measurements of the refractive index of semiconductor materials, both in wafer and in waveguide form, are presented. The technique used to this purpose is based on radiation coupling into the material by a prism; this method is used for the first time on semiconductors, by means of a silicon prism. Accuracy to the fourth decimal place is demonstrated, in favorable comparison to the best available data.

Citation Download Citation

S. Morasca and C. De Bernardi "High Accuracy Determination Of Semiconductor Substrate And Waveguide Refractive Index By Prism Coupling", Proc. SPIE 0993, Integrated Optical Circuit Engineering VI, (6 December 1988); https://doi.org/10.1117/12.960084

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