Optoelectronic mixing on CVD graphene up to 30 Gigahertz: analysis at high electrostatic doping

A. Montanaro; S. Mzali; J.-P. Mazellier; S. Molin; C. Larat; O. Bezencenet; P. Legagneux

doi:10.1117/12.2237289

26 September 2016 Optoelectronic mixing on CVD graphene up to 30 Gigahertz: analysis at high electrostatic doping

A. Montanaro, S. Mzali, J.-P. Mazellier, S. Molin, C. Larat, O. Bezencenet, P. Legagneux

Proceedings Volume 9932, Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices IX; 99320Q (2016) https://doi.org/10.1117/12.2237289
Event: SPIE Nanoscience + Engineering, 2016, San Diego, California, United States

Abstract

Due to its remarkable properties, graphene-based devices are particularly promising for optoelectronic applications. Thanks to its compatibility with standard silicon technology, graphene could compete III-V compounds for the development of low cost and high-frequency optoelectronic devices. We present a new optoelectronic device that consists in a coplanar waveguide integrating a commercially-available CVD graphene active channel. With this structure, we demonstrate high-frequency (30 GHz) broadband optoelectronic mixing in graphene, by measuring the response of the device to an optical intensity-modulated excitation and an electrical excitation at the same time. These features are particularly promising for RADAR and LIDAR applications, as well as for low-cost high-speed communication systems.

Conference Presentation

Citation Download Citation

A. Montanaro, S. Mzali, J.-P. Mazellier, S. Molin, C. Larat, O. Bezencenet, and P. Legagneux "Optoelectronic mixing on CVD graphene up to 30 Gigahertz: analysis at high electrostatic doping", Proc. SPIE 9932, Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices IX, 99320Q (26 September 2016); https://doi.org/10.1117/12.2237289

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