Crystallographic and optoelectronic properties of the novel thin film absorber Cu2GeS3

E. V. C. Robert; J. de Wild; D. Colombara; P. J. Dale

doi:10.1117/12.2236621

23 September 2016 Crystallographic and optoelectronic properties of the novel thin film absorber Cu₂GeS₃

E. V. C. Robert, J. de Wild, D. Colombara, P. J. Dale

Proceedings Volume 9936, Thin Films for Solar and Energy Technology VIII; 993607 (2016) https://doi.org/10.1117/12.2236621
Event: SPIE Optics + Photonics for Sustainable Energy, 2016, San Diego, California, United States

Abstract

Thin films of Cu₂GeS₃ are grown by annealing copper layers in GeS and S gaseous atmosphere above 460°C. Below 500°C the cubic polymorph is formed, having inferior optoelectronic properties compared to the monoclinic phase, formed at higher temperature. The bandgap of the cubic phase lies below that of the monoclinic phase: they are determined from absorption measurements to be 1.23 and 1.55 eV respectively. Photoluminescence measurements are performed and only the monoclinic Cu₂GeS₃ shows a photoluminescence signal with a peak maximum at 1.57 eV. We attribute this difference between cubic and monoclinic to the higher quasi fermi level splitting of the monoclinic phase. Wavelength dependent photoelectrochemical measurements demonstrate the Cu₂GeS₃ to be p-type with an apparent quantum efficiency of less than 3 % above the band gap.

Citation Download Citation

E. V. C. Robert, J. de Wild, D. Colombara, and P. J. Dale "Crystallographic and optoelectronic properties of the novel thin film absorber Cu₂GeS₃", Proc. SPIE 9936, Thin Films for Solar and Energy Technology VIII, 993607 (23 September 2016); https://doi.org/10.1117/12.2236621

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