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9 February 1989 All-Optical Switching Transients In A Silicon Waveguide
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Abstract
All-optical switching in silicon epilayer waveguides was investigated to determine the dependence of the transient recovery times on the "gate" pulse wavelength and the illumination geometry. Continuous wave light at a wavelength of 1.3 μm was end-fire coupled into planar waveguide structures and the guided beam path was then optically switched with a 500 psec-long gate pulse from a dye laser. Recovery times ranging from 1.2 to 15 nsec were observed. A numerical model was developed to predict the spatial and temporal free carrier distributions and the resulting deflection and absorption of the 1.3 μm beam. The variation in response speeds was shown to result from the increasing importance of Auger recombination at higher free carrier concentrations.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. D. Colbourne and P. E. Jessop "All-Optical Switching Transients In A Silicon Waveguide", Proc. SPIE 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II, (9 February 1989); https://doi.org/10.1117/12.960132
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