Bandfilling Electro-Optic Effect In InP, GaAs, GaSb, InAs, and InSb

Brian R. Bennett; Richard A. Soref

doi:10.1117/12.960125

9 February 1989 Bandfilling Electro-Optic Effect In InP, GaAs, GaSb, InAs, and InSb

Brian R. Bennett, Richard A. Soref

Proceedings Volume 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II; (1989) https://doi.org/10.1117/12.960125
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States

Abstract

Detailed calculations have been made of the change in refractive index and absorption of InP, GaAs, GaSb, InAs, and InSb produced by electrical injection of electrons or holes. Bandfilling, band-gap shrinkage, and the plasma effect were taken into account. A wide range of carrier concentrations and optical wavelengths was considered. The total electro-optic effect is relatively large at high levels of injection (or depletion). Index changes of 10-2, or more, are predicted and suggest that low-loss phase modulators and switches using carrier injection are feasible in these materials.

Citation Download Citation

Brian R. Bennett and Richard A. Soref "Bandfilling Electro-Optic Effect In InP, GaAs, GaSb, InAs, and InSb", Proc. SPIE 0994, Optoelectronic Materials, Devices, Packaging, and Interconnects II, (9 February 1989); https://doi.org/10.1117/12.960125

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