We present a novel SAM-forming molecule bisjulolidyldisulfide that reduces the WF of metal surfaces by ~1.2 eV and can lower the barrier for electron injection to organic semiconductors. Applied to Au and Ag surfaces, including inkjet-printed Ag on PET, we characterized bisjulolidyldisulfide monolayers by means of photoelectron spectroscopy (PES) and sessile drop technique, as well as their influence on the performance of n-type OFETs. Next a strong reduction of the contact resistance by two orders of magnitude, we found that this SAM treatment extends the shelf lifetime of ambient-stored OFET devices. Also, it improves the wettability and thereby facilitates solution processing of a subsequent layer with respect to the untreated surface.
The full electrical functionality of bisjulolidyldisulfide SAMs was found to become manifest with only one minute of immersion in ethanol solution. PES measurements suggests that the surface coverage is thorough on Au, but only fractional on Ag, especially on printed Ag. However, the quality of SAM-treated bottom contacts in n-type OFETs is very similar for all three investigated metal surfaces (Au and Ag evaporated and printed Ag). This is especially important for printed Ag-electrodes, as their surface was found to be significantly worse for device performance in comparison to their evaporated Ag counterpart. Using this surface treatment we realized integrated unipolar n-type ring oscillators with inkjet printed Ag electrodes.