Crystal growth and characterization of Hg-based chalcogenide compounds
(Conference Presentation)

Yihui He; Wenwen Lin; Jonathan C. Syrigos; Peng Li Wang; Saiful M. Islam; Kyle M. McCall; Svetlana S. Kostina; Zhifu Liu; Bruce W. Wessels; Mercouri G. Kanatzidis

doi:10.1117/12.2237827

2 November 2016 Crystal growth and characterization of Hg-based chalcogenide compounds (Conference Presentation)

Yihui He, Wenwen Lin, Jonathan C. Syrigos, Peng Li Wang, Saiful M. Islam, Kyle M. McCall, Svetlana S. Kostina, Zhifu Liu, Bruce W. Wessels, Mercouri G. Kanatzidis

Author Affiliations +

Proceedings Volume 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII; 99680B (2016) https://doi.org/10.1117/12.2237827
Event: SPIE Optical Engineering + Applications, 2016, San Diego, California, United States

Abstract

In this work, two Hg-based chalcogenides were investigated in detail to reveal their potential capability of radiation detection at room temperature (RT). Cs2Hg6S7, with a bandgap of 1.63 eV, which is designed by the dimensional reduction theory proposed by our group, were prepared and characterized. α-HgS, with a bandgap of ~2.10 eV, as a precursor used for the ternary compound synthesis, was also proposed and further investigated. For Cs2Hg6S7, the crystals tended to crystallize into needle form with small grains. Here, the conditions of Bridgman melt growth were optimized to obtain relatively large single crystals. The slight excess of Cs2S as a fluxing agent during growth was found to facilitate better crystallization and large grains. Interestingly, no inclusion or secondary phase was found in the as-grown single crystals. The improvement of bulk resistivity from ~10^6 Ωcm to 10^8 Ωcm was also achieved through the control of stoichiometry during crystal growth. For α-HgS crystals, both physical vapor transport and chemical vapor transport methods have been applied. By modifying the transport temperature and transport agent, single crystal with size about 3x1.5 mm^2 was grown with resistivity higher than 10^11 Ωcm. Photoluminescence (PL) revealed that multiple peaks observed in the 1.6-2.3 eV range and excitonic peak from for α-HgS single crystals were observed indicating good crystalline quality. Finally, the planar detectors for both crystals were tested under Co57 gamma ray source. Both of the crystals showed reasonable gamma ray response, while α-HgS crystals could respond at a relatively higher counting rate.

Conference Presentation

Citation Download Citation

Yihui He, Wenwen Lin, Jonathan C. Syrigos, Peng Li Wang, Saiful M. Islam, Kyle M. McCall, Svetlana S. Kostina, Zhifu Liu, Bruce W. Wessels, and Mercouri G. Kanatzidis "Crystal growth and characterization of Hg-based chalcogenide compounds (Conference Presentation)", Proc. SPIE 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII, 99680B (2 November 2016); https://doi.org/10.1117/12.2237827

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KEYWORDS

Crystals

Chalcogenides

Gamma radiation

Sensors

Luminescence

Current controlled current source

Hard x-rays

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