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2 November 2016 Growth and characterization of Cd1-xZnxSeyTe1-y for radiation detector applications(Conference Presentation)
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Our prior investigations showed that alloying CdTe with selenium results in improved material characteristics, such as a reduction in the concentration of secondary-phase particles, better compositional uniformity and less sub-grain boundary networks, as compared to CdTe/CdZnTe. However, by alloying with Se, the band-gap of CdTeSe is significantly reduced from the value for CdTe, which is the main drawback for high-resistivity CdTeSe compounds useful for radiation detection. In order to increase the band-gap, we are now growing Cd1-xZnxSeyTe1-y crystals for detector applications. The effect of Se alloying with CdZnTe will be discussed in terms of the concentration of secondary phases, stress-related defects such as sub-grain boundaries and their networks. Characterization results for the transport properties of the as-grown materials will also be discussed.
Conference Presentation
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Utpal N. Roy, Giuseppe S. Camarda, Yonngong Cui, Rubi Gul, Anwar Hossain, Ge Yang, Ralph B. James, Jakub Zázvorka, Václav Dedic, and Jan Franc "Growth and characterization of Cd1-xZnxSeyTe1-y for radiation detector applications(Conference Presentation)", Proc. SPIE 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII, 99680L (2 November 2016);

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