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2 November 2016 Growth and characterization of Cd1-xZnxSeyTe1-y for radiation detector applications(Conference Presentation)
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Abstract
Our prior investigations showed that alloying CdTe with selenium results in improved material characteristics, such as a reduction in the concentration of secondary-phase particles, better compositional uniformity and less sub-grain boundary networks, as compared to CdTe/CdZnTe. However, by alloying with Se, the band-gap of CdTeSe is significantly reduced from the value for CdTe, which is the main drawback for high-resistivity CdTeSe compounds useful for radiation detection. In order to increase the band-gap, we are now growing Cd1-xZnxSeyTe1-y crystals for detector applications. The effect of Se alloying with CdZnTe will be discussed in terms of the concentration of secondary phases, stress-related defects such as sub-grain boundaries and their networks. Characterization results for the transport properties of the as-grown materials will also be discussed.
Conference Presentation
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Utpal N. Roy, Giuseppe S. Camarda, Yonngong Cui, Rubi Gul, Anwar Hossain, Ge Yang, Ralph B. James, Jakub Zázvorka, Václav Dedic, and Jan Franc "Growth and characterization of Cd1-xZnxSeyTe1-y for radiation detector applications(Conference Presentation)", Proc. SPIE 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII, 99680L (2 November 2016); https://doi.org/10.1117/12.2240430
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