Translator Disclaimer
Presentation + Paper
19 September 2016 Control over dark current densities and cutoff wavelengths of GaAs/AlGaAs QWIP grown by multi-wafer MBE reactor
Author Affiliations +
Abstract
Performance of quantum well infrared photodetector (QWIP) device parameters such as detector cutoff wavelength and the dark current density depend strongly on the quality and the control of the epitaxy material growth. In this work, we report on a methodology to precisely control these critical material parameters for long wavelength infrared (LWIR) GaAs/AlGaAs QWIP epi wafers grown by multi-wafer production Molecular beam epitaxy (MBE). Critical growth parameters such as quantum well (QW) thickness, AlGaAs composition and QW doping level are discussed.
Conference Presentation
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Roodenko, K. K. Choi, K. P. Clark, E. D. Fraser, K. W. Vargason, J.-M. Kuo, Y.-C. Kao, and P. R. Pinsukanjana "Control over dark current densities and cutoff wavelengths of GaAs/AlGaAs QWIP grown by multi-wafer MBE reactor", Proc. SPIE 9974, Infrared Sensors, Devices, and Applications VI, 997404 (19 September 2016); https://doi.org/10.1117/12.2236881
PROCEEDINGS
6 PAGES + PRESENTATION

SHARE
Advertisement
Advertisement
RELATED CONTENT

C-QWIP material design and growth
Proceedings of SPIE (May 14 2007)
Quantum well infrared detection devices
Proceedings of SPIE (June 12 2001)
LWIR multispectral quantum well infrared photodetectors
Proceedings of SPIE (October 10 2003)
Terahertz quantum well photodetectors
Proceedings of SPIE (August 29 2006)
Whither P-type GaAs/AlGaAs QWIP?
Proceedings of SPIE (May 21 2002)

Back to Top