20Gbps high-gain BW-product TMD slot-detector on PIC

Hao Wang; Chandraman Patil; Hamed Dalir; Volker J. Sorger

doi:10.1117/12.2613812

5 March 2022 20Gbps high-gain BW-product TMD slot-detector on PIC

Hao Wang, Chandraman Patil, Hamed Dalir, Volker J. Sorger

Proceedings Volume PC12003, 2D Photonic Materials and Devices V; PC120030A (2022) https://doi.org/10.1117/12.2613812
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

Here we present our latest PIC-integrated TMD-based slot-enhanced photodetector. The metallic slot enhances the light-matter-interaction and hence absorption into the semiconductor TMD layer. Unlike Graphene detectors, this device based on a 1+eV wide Eg detector (MoTe2) shows a low dark-current Of 100’s pA (i.e. 3 orders of magnitude lower than graphene). Utilizing the plasmonic slot allows to harness scaling effects known from FETs, and reduce carrier transit times. Thus, we demonstrate 10GHz roll-offs despite a rather low mobility. We further show that the short-channel allows for near-ballistic transport, and more importantly high gain-bandwidth-products (GPB), which scales with the source-drain distance squared. The combination of a TMD semiconductor with a slot for short transit times, enables we new class of efficient yet compact PIC-integrated detectors offering high GBP.

Conference Presentation

Citation Download Citation

Hao Wang, Chandraman Patil, Hamed Dalir, and Volker J. Sorger "20Gbps high-gain BW-product TMD slot-detector on PIC", Proc. SPIE PC12003, 2D Photonic Materials and Devices V, PC120030A (5 March 2022); https://doi.org/10.1117/12.2613812

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KEYWORDS

Photonic integrated circuits

Sensors

Graphene

Semiconductors

Absorption

Field effect transistors

Photodetectors

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