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The advancement of novel EUV resist materials is a prominent enabler of next-generation lithographic technologies. The development of such materials is supported at PSI, within a joint research program with ASML. This program is designed to expose and characterize novel EUV materials of industrial vendors with the EUV interference lithography tool and the metrology infrastructure available at PSI. In this work, we consider the recent results obtained in the first half of 2022. We describe the exposure tool as well as the metrology implemented at PSI. Material performance is investigated in regard to the resolution, line-width roughness & sensitivity (RLS) tradeoff, with an emphasis on high-resolution patterning. Current limitations of each platform are presented and general progress and perspectives are discussed to lead the way to higher resolution results.
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Timothée P. Allenet, Michaela Vockenhuber, Lidia van Lent-Protasova, Yasin Ekinci, Dimitrios Kazazis, "On EUV resist screening with interference lithography in H1-2022," Proc. SPIE PC12292, International Conference on Extreme Ultraviolet Lithography 2022, PC122920C (16 November 2022); https://doi.org/10.1117/12.2641837