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The mask 3D effect of the EUV mask is key to implementing a high NA scanner process. This is attributed not only to the absorber but also to the multilayer films. Mo/Si multilayers are widely used for EUV masks. However, it may not have sufficient properties in terms of mask 3D effect. We have developed an alternative multilayer toward application to the high NA system.
There are various factors that mask blanks affect wafer productivity. In this report, we evaluated durability performances. These evaluation results on the alternative multilayer will be presented and the next action will be discussed for future production.
Teiichiro Umezawa,Yohei Ikebe,Naoki Hayase, andTakahiro Onoue
"Feasibility study of alternative multilayer for EUV mask", Proc. SPIE PC12293, Photomask Technology 2022, PC122930E (11 November 2022); https://doi.org/10.1117/12.2644225
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Teiichiro Umezawa, Yohei Ikebe, Naoki Hayase, Takahiro Onoue, "Feasibility study of alternative multilayer for EUV mask," Proc. SPIE PC12293, Photomask Technology 2022, PC122930E (11 November 2022); https://doi.org/10.1117/12.2644225