Presentation
11 November 2022 Enabling process optimization for EUV phase shift masks using AIMS® EUV phase metrology
Renzo Capelli, Nathan Wilcox, Sven Krannich, Dinumol Devasia, Grizelda Kersteen, Arvind Sundaramurthy, Chang Ju Choi, Sandro Hoffmann, Zachary Rice, Patrick Straney, Klaus Gwosch, Markus Koch, Tim Helbig
Author Affiliations +
Abstract
In the last year, the AIMS® EUV has been extended to applications beyond the native defectivity review, such as the metrology of EUV Phase Shift Masks (PSM). The technology developed for the AIMS® EUV Phase metrology application enables the measurement of the phase difference between the absorber reflected light relative to the light reflected by the multilayer. A reliable information over the mask phase is important for process control in the mask production chain, as well as for the optimization of the wafer exposure process on the scanner. In this paper we will describe the challenges of enabling a precise metrology for the mask phase and will investigate the advantages of employing EUV phase metrology capability as process of record in the mask shop for different engineering and production steps: etch control, imaging optimization and wafer process window enhancement.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Renzo Capelli, Nathan Wilcox, Sven Krannich, Dinumol Devasia, Grizelda Kersteen, Arvind Sundaramurthy, Chang Ju Choi, Sandro Hoffmann, Zachary Rice, Patrick Straney, Klaus Gwosch, Markus Koch, and Tim Helbig "Enabling process optimization for EUV phase shift masks using AIMS® EUV phase metrology", Proc. SPIE PC12293, Photomask Technology 2022, PC122930K (11 November 2022); https://doi.org/10.1117/12.2645004
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KEYWORDS
Photomasks

Extreme ultraviolet

Metrology

Phase shifts

Phase measurement

Semiconducting wafers

Product engineering

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