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21 March 2023 Controlled nanopatterning and plasma etching of sub-100 nm nanopillars for low dislocation density of pendeo-epitaxy GaN: Towards MicroDisplays
Nabil Labchir, Saber Hammami, Kilian Baril, Maya Wehbe, Sébastien Labau, Camille Petit-Etienne, Blandine Alloing, Ludovic Dupré, Matthew Charles, Jesus Zuniga Perez, Cecile Gourgon
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2649697
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
In order to drop the dislocation density and reduce the manufacturing costs, GaN can be deposited on substrates that possess a high density of growth sites. In our present strategy, we simultaneously focus on overcoming the misorientation and dislocation problems. To achieve this goal, nanopatterning of GaN/AlN layers deposited on Silicon-On-Insulator (SOI) substrates is used in order to fabricate nanopillar arrays, using nanoimprint lithography (NIL) and plasma etching. This will be reflected by the high-quality epitaxial layer of GaN. The latter will be used as an active layer to produce a LED array having a better emission quality.
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Nabil Labchir, Saber Hammami, Kilian Baril, Maya Wehbe, Sébastien Labau, Camille Petit-Etienne, Blandine Alloing, Ludovic Dupré, Matthew Charles, Jesus Zuniga Perez, and Cecile Gourgon "Controlled nanopatterning and plasma etching of sub-100 nm nanopillars for low dislocation density of pendeo-epitaxy GaN: Towards MicroDisplays", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2649697
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KEYWORDS
Gallium nitride
Nanostructures
Plasma etching
Light emitting diodes
Nanolithography
Optoelectronics
Crystals
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