Presentation
17 March 2023 Monolithic mid-infrared GeSn photodetectors on silicon
Author Affiliations +
Abstract
This paper discusses the potential of GeSn semiconductors as versatile building blocks for manufacturable silicon-integrated mid-infrared photonic and optoelectronic devices. This wavelength range is highly attractive to implement a variety of applications including heat harvesting, spectroscopy, free-space and fiber-optical communications, surveillance and recognition, remote biochemical sensing, and medical imaging. Challenges related to the wafer-level epitaxial growth of these metastable semiconductors on silicon will be addressed and their atomic-level properties will be discussed. Furthermore, their integration in device processing will also be presented. Examples including lasers, light-emitting diodes, high-speed photodetectors, and thermophotovoltaic cells operating in the mid-infrared range will be described and their performance discussed.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oussama Moutanabbir "Monolithic mid-infrared GeSn photodetectors on silicon", Proc. SPIE PC12425, Smart Photonic and Optoelectronic Integrated Circuits 2023, PC124250E (17 March 2023); https://doi.org/10.1117/12.2650983
Advertisement
Advertisement
KEYWORDS
Mid-IR

Silicon

Photodetectors

Semiconductors

Silicon photonics

Photonic devices

Remote sensing

Back to Top