Radical etching of high-k and low-k dielectrics for three-dimension device manufacturing with microwave-ECR etching system

Yusuke Nakatani; Yasushi Sonoda; Taku Iwase; Yi Lin; Masashi Kawabata; Motohiro Tanaka

doi:10.1117/12.2656040

30 April 2023 Radical etching of high-k and low-k dielectrics for three-dimension device manufacturing with microwave-ECR etching system

Yusuke Nakatani, Yasushi Sonoda, Taku Iwase, Yi Lin, Masashi Kawabata, Motohiro Tanaka

Author Affiliations +

Proceedings Volume PC12499, Advanced Etch Technology and Process Integration for Nanopatterning XII; PC124990I (2023) https://doi.org/10.1117/12.2656040
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Conference Poster

Abstract

Ion shield plate equipped Microwave-ECR etcher was developed to enable reactive ion vertical etching and isotropic radical etching in one chamber. The radical etching of BCl3 could etch HfO2 (High-k) in the low-pressure region below 0.6 Pa. The addition of SiCl4 to BCl3 improved the selectivity to SiGe. For SiOC (Low-k), NF3/N2 gas chemistry can be used for highly selective etching to SiO2 and SiN. The radical etching of NF3/N2 has low carbon reduction than the reactive ion etching.

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Yusuke Nakatani, Yasushi Sonoda, Taku Iwase, Yi Lin, Masashi Kawabata, and Motohiro Tanaka "Radical etching of high-k and low-k dielectrics for three-dimension device manufacturing with microwave-ECR etching system", Proc. SPIE PC12499, Advanced Etch Technology and Process Integration for Nanopatterning XII, PC124990I (30 April 2023); https://doi.org/10.1117/12.2656040

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