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Two-dimensional (2D) materials represent a fascinating material class for optoelectronics. While proof-of-concept devices with outstanding performance has been reported in literature, they often rely on micrometer-scale 2D materials and are thus of limited practical use. Overcoming the bottleneck to real-world applications requires both scalable materials and scalable device architectures.
We report on wafer-scale 2D materials grown by MOCVD and their implementation in scalable optoelectronic devices. Light emitting devices realized by embedding WS2 monolayers in a vertical device design emit large area red electroluminescence with a turn-on voltage as low as 2.5 V on both, rigid as well as flexible substrates. Direct growth of 2D material heterostructures on a sapphire substrate enables the fabrication of photodetectors without involving any transfer process. We demonstrate an enhancement of the responsivity by more than 5 orders of magnitude in a WS2-MoS2 heterostructure device as compared to a single layer reference. In photosensors that combine a MOCVD-grown WS2 monolayer as light sensitizer with CVD-grown graphene as a conductive channel, we have been able to shed light on the widely varying values of responsivity reported in literature by disentangling adsorbate effects and intrinsic photoresponse.
Gerd Bacher
"Optoelectronic devices based on scalable 2D materials", Proc. SPIE PC12584, Smart Materials for Opto-Electronic Applications, PC125840H (8 June 2023); https://doi.org/10.1117/12.2665706
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Gerd Bacher, "Optoelectronic devices based on scalable 2D materials," Proc. SPIE PC12584, Smart Materials for Opto-Electronic Applications, PC125840H (8 June 2023); https://doi.org/10.1117/12.2665706