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Ultrafast lasers are very useful for surface engineering of semiconductors. Here we used a Scanning Tunneling Microscope (STM) to map in situ topography and spectra of hydrofluoric acid-etched silicon (100) damaged by an ultrafast pulsed Yb:KGW laser at 1030nm with 70fs duration in high vacuum. We observed absence and presence of laser induced periodic surface structures with single and multiple shot irradiation, respectively. Surface morphology were captured with atomic resolution, which can help understand the subtle changes to surface ultrafast lasers can cause near the laser induced damage threshold fluence. The results demonstrate the potential of STM for in-situ studies of laser damage on clean surfaces in ultra-high vacuum.
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Liam Clink, Zhihan Li, Mohamed Yaseen Noor, Jay Gupta, Enam A. Chowdhury, "In situ investigation of ultrafast laser damage on Si (100) surface in ultra-high vacuum," Proc. SPIE PC12726, Laser-Induced Damage in Optical Materials 2023, PC127260P (24 November 2023); https://doi.org/10.1117/12.2685023