ZEISS AIMS EUV high-NA for actinic mask review for the next EUV scanner generation

Klaus Gwosch; Renzo Capelli; Matthias Roesch; Robert Nicholls; Bruno Langbehn; Michael Mohn; Andreas Verch; Maximilian Albert; Grizelda Kersteen; Alexander Winkler; Carolin Müller; Sven Krannich

doi:10.1117/12.2687495

22 November 2023 ZEISS AIMS EUV high-NA for actinic mask review for the next EUV scanner generation

Klaus Gwosch, Renzo Capelli, Matthias Roesch, Robert Nicholls, Bruno Langbehn, Michael Mohn, Andreas Verch, Maximilian Albert, Grizelda Kersteen, Alexander Winkler, Carolin Müller, Sven Krannich

Author Affiliations +

Proceedings Volume PC12750, International Conference on Extreme Ultraviolet Lithography 2023; PC127500O (2023) https://doi.org/10.1117/12.2687495
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States

Abstract

AIMS® EUV is a unique tool in the EUV mask infrastructure. It allows qualification of the mask printing performance in the aerial image under scanner equivalent conditions. For emulation of the high NA EUV scanner, ZEISS upgraded the existing 0.33 NA AIMS® EUV platform. The system can now emulate both 0.33 NA isomorphic scanners as well as 0.55 NA anamorphic scanners. We present the concept of AIMS® EUV high NA with focus on the emulation of a wafer defocus in the anamorphic high NA scanner. Besides defect review applications, this enables aerial image based high NA imaging studies.

Conference Presentation

Citation Download Citation

Klaus Gwosch, Renzo Capelli, Matthias Roesch, Robert Nicholls, Bruno Langbehn, Michael Mohn, Andreas Verch, Maximilian Albert, Grizelda Kersteen, Alexander Winkler, Carolin Müller, and Sven Krannich "ZEISS AIMS EUV high-NA for actinic mask review for the next EUV scanner generation", Proc. SPIE PC12750, International Conference on Extreme Ultraviolet Lithography 2023, PC127500O (22 November 2023); https://doi.org/10.1117/12.2687495

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