Nanoscale investigation of nonradiative point defects in InGaN/GaN quantum wells

Thomas Weatherley; Gunnar Kusch; Duncan T. L. Alexander; Rachel A. Oliver; Jean-François Carlin; Raphaël Butté; Nicolas Grandjean

doi:10.1117/12.3000482

9 March 2024 Nanoscale investigation of nonradiative point defects in InGaN/GaN quantum wells

Thomas Weatherley, Gunnar Kusch, Duncan T. L. Alexander, Rachel A. Oliver, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean

Author Affiliations +

Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC1288618 (2024) https://doi.org/10.1117/12.3000482
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

In recent years, point defects (PDs) have been unveiled as critical nonradiative recombination centres in InGaN/GaN quantum wells (QWs). When left unchecked, these nonradiative PDs can lead to at least an order-of-magnitude reduction in the internal quantum efficiency of blue light-emitting diodes. While macroscale studies have provided some information on such critical PDs, much deeper insight could be obtained by directly accessing the nanoscale impact of PDs on QW optical properties. Here, we present a detailed investigation of nonradiative PDs in a series of single InGaN/GaN QWs. Applying time-resolved cathodoluminescence (TRCL), we map the evolution of QW CL intensity spatially and temporally with nanometre and sub-nanosecond resolution, pinpointing individual PD locations. We fit the CL decays around single PDs with a carrier diffusion-recombination model to fully quantify their intrinsic properties, including novel phonon-limited relaxation times.

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Citation Download Citation

Thomas Weatherley, Gunnar Kusch, Duncan T. L. Alexander, Rachel A. Oliver, Jean-François Carlin, Raphaël Butté, and Nicolas Grandjean "Nanoscale investigation of nonradiative point defects in InGaN/GaN quantum wells", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC1288618 (9 March 2024); https://doi.org/10.1117/12.3000482

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