Undoped β-Ga2O3 layer thickness effect on performance of MOSFETs grown on sapphire substrate

Ray-Hua Horng; Chan-Hung Lu; Fu-Gow Tarntair

doi:10.1117/12.3012736

16 March 2024 Undoped β-Ga₂O₃ layer thickness effect on performance of MOSFETs grown on sapphire substrate

Ray-Hua Horng, Chan-Hung Lu, Fu-Gow Tarntair

Proceedings Volume PC12887, Oxide-based Materials and Devices XV; PC128870E (2024) https://doi.org/10.1117/12.3012736
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

β-Ga2O3 MOSFETs with various un-intentionally doped (UID) layer thicknesses of (2 ̅01) beneath the Si doped film were grown by metalorganic chemical vapor deposition on a (0001) sapphire substrate. The UID layer thickness gives rise to MOSFET turn-on current increasing, Ron decreasing and breakdown voltage decreasing. Through X-ray photoelectron spectroscopy (XPS) we ascribe this increased turn-on current and reduced breakdown voltage to oxygen vacancies.

Conference Presentation

Citation Download Citation

Ray-Hua Horng, Chan-Hung Lu, and Fu-Gow Tarntair "Undoped β-Ga₂O₃ layer thickness effect on performance of MOSFETs grown on sapphire substrate", Proc. SPIE PC12887, Oxide-based Materials and Devices XV, PC128870E (16 March 2024); https://doi.org/10.1117/12.3012736

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