Mask shift double exposure (MSDE) is a method of patterning by exposing energy to the PR of the wafer twice consecutively without unloading the wafer and mask. It was confirmed that the first and second exposure energies are linearly summed, showing that the combination of the first and second exposure patterns allows more sophisticated patterning than one exposure. When the two exposure patterns are parallel lines in the MSDE approach, a 19 nm line CD is realized by precisely controlling the line CD according to the exposure interval between the two lines. In addition, when the two exposure patterns are orthogonal lines in MSDE, a 29 nm pillar pattern can be realized, which is beyond the limit of resolution of ArF immersion lithography.
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