Poster
10 April 2024 Mask shift double exposure method in arf immersion lithography
Jungchul Song, Gyu-Won Han, Jeonghwan Kim, Ga-Won Lee
Author Affiliations +
Conference Poster
Abstract
Mask shift double exposure (MSDE) is a method of patterning by exposing energy to the PR of the wafer twice consecutively without unloading the wafer and mask. It was confirmed that the first and second exposure energies are linearly summed, showing that the combination of the first and second exposure patterns allows more sophisticated patterning than one exposure. When the two exposure patterns are parallel lines in the MSDE approach, a 19 nm line CD is realized by precisely controlling the line CD according to the exposure interval between the two lines. In addition, when the two exposure patterns are orthogonal lines in MSDE, a 29 nm pillar pattern can be realized, which is beyond the limit of resolution of ArF immersion lithography.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Jungchul Song, Gyu-Won Han, Jeonghwan Kim, and Ga-Won Lee "Mask shift double exposure method in arf immersion lithography", Proc. SPIE PC12953, Optical and EUV Nanolithography XXXVII, PC129530X (10 April 2024); https://doi.org/10.1117/12.3010697
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KEYWORDS
Immersion lithography

Scanners

Etching

Dry etching

Light sources

Lithography

Optical lithography

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