Aysegul Cumurcu Gysen,1 Cheuk-Wah Man,1 Bas van Meerten,1 Hilbert van Loo,1 Eelco van Setten,1 Stefan Smith-Meerman,1 Gokay Yegen,1 Diederik de Bruin,1 Jan van Schoothttps://orcid.org/0000-0001-6643-7254,1 Rudy Peeters,1 Kaustuve Bhattacharyya,1 Greet Storms,1 Peter Vanoppen1
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
EUV lithography continues to make scaling cost effective for chip manufacturers and allows Moore`s law to pursue. High NA EUV with its increased numerical aperture (NA) from 0.33NA to 0.55NA enables 1.7x smaller features and improved local CDU. This brings several benefits for advance chipmakers such as patterning cost reduction due to multi-patterning, reduced defect density as a result of process simplification and shorter cycle time via mask reduction. Currently, there are multiple high NA EUV systems (EXE:5000) which completed the built and qualification in the ASML factory. The first performance data is being collected via one of these high NA EUV systems. This paper will cover the performance results of the high NA EUV platform (EXE:5000) on imaging and overlay based on the initial findings from common learning collaboration. Furthermore, the progresses towards future high NA EUV systems will be described.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Aysegul Cumurcu Gysen, Cheuk-Wah Man, Bas van Meerten, Hilbert van Loo, Eelco van Setten, Stefan Smith-Meerman, Gokay Yegen, Diederik de Bruin, Jan van Schoot, Rudy Peeters, Kaustuve Bhattacharyya, Greet Storms, Peter Vanoppen, "High-resolution lithography: latest generation in EUV lithograph with 0.55 NA," Proc. SPIE PC13215, International Conference on Extreme Ultraviolet Lithography 2024, PC1321505 (13 November 2024); https://doi.org/10.1117/12.3036955