Dry extreme ultraviolet lithography via N-heterocyclic carbene-metal complexes and etchant-free thermal development

Dowon Kim; Sukwon Hong; Jinhwan Byeon; Jaenong Ahn; Sangjin Kim; In-Uk Moon; Huijeong Ryu; Dong Suk Oh; Yang Hun Yoon; Hae-geun Jee; Chan-Cuk Hwang

doi:10.1117/12.3034450

13 November 2024 Dry extreme ultraviolet lithography via N-heterocyclic carbene-metal complexes and etchant-free thermal development

Dowon Kim, Sukwon Hong, Jinhwan Byeon, Jaenong Ahn, Sangjin Kim, In-Uk Moon, Huijeong Ryu, Dong Suk Oh, Yang Hun Yoon, Hae-geun Jee, Chan-Cuk Hwang

Author Affiliations +

Proceedings Volume PC13215, International Conference on Extreme Ultraviolet Lithography 2024; PC132150S (2024) https://doi.org/10.1117/12.3034450
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States

Conference Poster

Abstract

Extreme ultraviolet (EUV) lithography is pivotal in advancing semiconductor technology by drastically reducing device dimensions and enabling the continuation of Moore's Law. However, the full potential of EUV lithography is constrained by conventional solution-based wet processing methods, which hinder further minimization of feature sizes. To unlock the next generation of semiconductor fabrication, there is an urgent need for dry development technology that addresses the environmental and performance limitations of traditional wet methods. Here, we introduce an etchant-free, dry-developable EUV photoresist composed of small molecules, utilizing N-heterocyclic carbene (NHC) metal-ligand complexes. Our photoresists exhibit exceptional EUV sensitivity, achieving half-saturation with only 8.5 or 27mJ/cm². These materials feature dry development capability through a simple thermal treatment, termed thermal development, for the removal of unexposed photoresist areas. This innovative material allows for a 80nm resolution via thermal development, demonstrating their potential for high-resolution patterning at low dosages and the realization of dry-developed nanopatterns

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Dowon Kim, Sukwon Hong, Jinhwan Byeon, Jaenong Ahn, Sangjin Kim, In-Uk Moon, Huijeong Ryu, Dong Suk Oh, Yang Hun Yoon, Hae-geun Jee, and Chan-Cuk Hwang "Dry extreme ultraviolet lithography via N-heterocyclic carbene-metal complexes and etchant-free thermal development", Proc. SPIE PC13215, International Conference on Extreme Ultraviolet Lithography 2024, PC132150S (13 November 2024); https://doi.org/10.1117/12.3034450

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