In the future, since semiconductor devices with higher-density electronic circuits are required, beyond EUV (BEUV) lithography technology with an exposure wavelength around 6.7nm is expected to utilize as the next generation lithography. La/B-based multilayers were reported as a high theoretical reflective multilayer. However, the stability of the reflectance of La/B-based multilayers would be low because of the high reactivity of La material. Thus, we proposed carbon/boron (C/B) multilayer for BEUV multilayer as a stable and highly reflective multilayer for BEUV Lithography. The optical constants of carbon films vary greatly with density. As the density of Carbon films increases, the reflectance of C/B multilayer improves, and the bandwidth becomes wider. In this study, we report the development of C/B multilayers with high density Carbon films.
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