Poster
13 November 2024 Development of reflection type soft x-ray projection microscope for the spatial distribution imaging of resist thin film
Shuhei Iguchi, Tetsuo Harada, Shinji Yamakawa
Author Affiliations +
Conference Poster
Abstract
The technical requirements for EUV lithography resists are low line-width roughness (LWR) and high sensitivity. LWR would occur at non-uniform reaction points of aggregated functional groups in the resists. Resonant soft x-ray absorption can be used to observe these functional groups with high contrast. To evaluate the micrometer-scale aggregation of resist compounds, reflection type soft x-ray projection microscope (RSXRPM) was developed at the BL-10 beamline of the NewSUBARU synchrotron light facility. In this study, we observed x-ray line chart of 100 to 500nm width to evaluate the resolution limit of this microscope. We also observed the resist thin film on the silicon substrate and the silicon substrate to evaluate the aggregation in the resist thin film.
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shuhei Iguchi, Tetsuo Harada, and Shinji Yamakawa "Development of reflection type soft x-ray projection microscope for the spatial distribution imaging of resist thin film", Proc. SPIE PC13215, International Conference on Extreme Ultraviolet Lithography 2024, PC132150X (13 November 2024); https://doi.org/10.1117/12.3034664
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Microscopes

Thin films

X-rays

Reflection

Silicon

X-ray imaging

Line width roughness

Back to Top