PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The technical requirements for EUV lithography resists are low line-width roughness (LWR) and high sensitivity. LWR would occur at non-uniform reaction points of aggregated functional groups in the resists. Resonant soft x-ray absorption can be used to observe these functional groups with high contrast. To evaluate the micrometer-scale aggregation of resist compounds, reflection type soft x-ray projection microscope (RSXRPM) was developed at the BL-10 beamline of the NewSUBARU synchrotron light facility. In this study, we observed x-ray line chart of 100 to 500nm width to evaluate the resolution limit of this microscope. We also observed the resist thin film on the silicon substrate and the silicon substrate to evaluate the aggregation in the resist thin film.
Shuhei Iguchi,Tetsuo Harada, andShinji Yamakawa
"Development of reflection type soft x-ray projection microscope for the spatial distribution imaging of resist thin film", Proc. SPIE PC13215, International Conference on Extreme Ultraviolet Lithography 2024, PC132150X (13 November 2024); https://doi.org/10.1117/12.3034664
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Shuhei Iguchi, Tetsuo Harada, Shinji Yamakawa, "Development of reflection type soft x-ray projection microscope for the spatial distribution imaging of resist thin film," Proc. SPIE PC13215, International Conference on Extreme Ultraviolet Lithography 2024, PC132150X (13 November 2024); https://doi.org/10.1117/12.3034664