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The critical issue in EUV resists is the suppression of line width roughness (LWR). The one of the factors contributing to the LWR is the aggregation of chemical compositions in resist thin films. Hence, a method is needed to evaluate the aggregation of chemical composition in resist thin films. We have observed the chemical composition on the resist thin film using photoemission electron microscopy (PEEM). PEEM is a powerful evaluation tool to observe chemical information on sample surface, and promising for observing the aggregation of chemical composition on the resist thin film surface. In this study, we will report the observation of the carbon distribution of EUV resist thin film surface using PEEM and the measurement of XAS-PEEM spectra of the EUV resist thin film surface.
Tsukasa Sasakura,Shinji Yamakawa, andTetsuo Harada
"Photoemission electron microscopy (PEEM) study of chemical composition on the surface of EUV resist thin films", Proc. SPIE PC13215, International Conference on Extreme Ultraviolet Lithography 2024, PC132150Y (13 November 2024); https://doi.org/10.1117/12.3034670
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Tsukasa Sasakura, Shinji Yamakawa, Tetsuo Harada, "Photoemission electron microscopy (PEEM) study of chemical composition on the surface of EUV resist thin films," Proc. SPIE PC13215, International Conference on Extreme Ultraviolet Lithography 2024, PC132150Y (13 November 2024); https://doi.org/10.1117/12.3034670