Residue particle contamination control in advanced EUV pod

Asheesh Nautiyal

doi:10.1117/12.3034691

13 November 2024 Residue particle contamination control in advanced EUV pod

Asheesh Nautiyal

Author Affiliations +

Proceedings Volume PC13215, International Conference on Extreme Ultraviolet Lithography 2024; PC1321510 (2024) https://doi.org/10.1117/12.3034691
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States

Conference Poster

Abstract

In this study, the authors present a unique setup for characterizing radiation sources for a broad wavelength range from 5nm to 1000nm. The setup includes flat-field diffraction gratings, a back-thinned CCD detector and spectral thin film filters. The gratings and detector were rigorously characterized at PTB, Berlin. Thin film filters absorb radiation from higher diffraction orders. The wavelength range above 200nm is measured using Czerny-Turner modules. The resulting spectra are combined to obtain the full spectrum. The overall design and the required calibration steps are covered in the contribution.

Citation Download Citation

Asheesh Nautiyal "Residue particle contamination control in advanced EUV pod", Proc. SPIE PC13215, International Conference on Extreme Ultraviolet Lithography 2024, PC1321510 (13 November 2024); https://doi.org/10.1117/12.3034691

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