The transport of slow electrons is critical in various fields, including extreme ultraviolet (EUV) lithography, where electrons generated after EUV photon absorption can induce chemical reactions, affecting lithographic resolution. Investigating electron transport in EUV-relevant materials is essential for enhancing this resolution. Our presentation discusses the substrate-overlayer technique to measure electron attenuation lengths (EAL) and energy-resolved EAL in the 10 to 90eV range. We found that EAL values range from 0.6 to 2.7nm, with material composition having a greater impact on EAL than electron energy. Our results align well with literature findings, offering insights into low-energy electron behavior and their relationship with the universal curve, aiding the improvement of EUV lithography.
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