Narrow-Gap Semiconductor Photodiodes

Author(s): Antoni Rogalski, Krzysztof Adamiec, Jaroslaw Rutkowski

Published: 2000

PDF ISBN: 9781510629943 | Print ISBN: 9780819436191

DESCRIPTION

This book, originally published December 5th, 2000, has been republished as an eBook October 21st, 2022.

In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.

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Front Matter

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CHAPTER 1.

Introduction

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1.1 Historical background
1.2 General classification of IR detectors
1.3 General theory of photon detectors
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CHAPTER 2.

Narrow-Gap Semiconductor Materials

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2.1 III–V materials
2.2 HgCdTe ternary alloy
2.2.1 Crystal growth
2.2.2 Defects and impurities
2.2.3 Semiconductor properties
2.3 Lead salts
2.3.1 Crystal growth
2.3.2 Defects and impurities
2.3.3 Some physical properties
2.4 Hg-based alternatives to HgCdTe
2.4.1 Crystal growth
2.4.2 Some physical properties
References

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CHAPTER 3.

Generation-Recombination Processes: Carrier Lifetime

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3.1 Shockley-Read mechanism
3.2 Radiative mechanism
3.3 Auger mechanism
3.3.1 Band-to-band Auger mechanisms
3.3.2 Other Auger recombination mechanisms
3.4 Carrier lifetime in InSb and InAs
3.5 Carrier lifetime in InxGa1–xAs
3.6 Carrier lifetime in Hg1–xCdxTe
3.7 Carrier lifetime in lead salts
3.8 Carrier lifetimes in superlattices
3.8.1 HgTe/CdTe superlattices
3.8.2 InAs/Ga1–xInxSb strained layer superlattices
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CHAPTER 4.

Operating Principles of Photodiodes

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4.1 p–n junction photodiodes
4.1.1 Ideal diffusion-limited p–n junctions
4.1.2 Real p–n junctions
4.1.3 Response time
4.2 Schottky barrier photodiodes
4.2.1 Schottky-Mott theory and its modifications
4.2.2 Current transport processes
4.3 MIS photodiodes
4.4 Non-equilibrium photodiodes
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CHAPTER 5.

Focal Plane Arrays

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5.1 Overview of focal plane array architectures
5.2 Monolithic focal plane arrays
5.2.1 Charge-coupled devices
5.2.2 Charge injection devices
5.2.3 Charge imaging matrixes
5.2.4 Silicon FPAs: IT-CCD, CSD and MOS FPAs
5.2.5 Direct-charge-injection silicon FPAs
5.3 Hybrid focal plane arrays
5.3.1 Direct injection
5.3.2 Buffered direct injection
5.3.3 Gate modulation
5.4 Maturity, cost, applications and technology directions
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CHAPTER 6.

III–V Photodiodes

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6.1 InSb photodiodes
6.2 InSb nonequilibrium photodiodes
6.3 InAs photodiodes
6.4 InAsSb photodiodes
6.5 InGaAs photodiodes
6.6 Focal plane arrays
6.6.1 Hybrid InSb/Si focal plane arrays
6.6.2 InSb charge injection devices
6.6.3 InSb charge-coupled devices
6.6.4 Hybrid InGaAs/Si focal plane arrays
References

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CHAPTER 7.

HgCdTe Photodiodes

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7.1 Fundamental limitation to HgCdTe photodiode performance
7.2 Nonfundamental sources of dark current and noise
7.3 Technology
7.3.1 Hg in-diffusion
7.3.2 Ion milling
7.3.3 Ion implantation
7.3.4 Doping during growth
7.3.5 Other techniques
7.3.6 Passivation
7.3.7 Contact metallization
7.4 Properties of HgCdTe photodiodes
7.4.1 LWIR devices at low temperatures
7.4.2 LWIR devices at intermediate and ambient temperatures
7.4.3 MWIR photodiodes
7.4.4 SWIR photodiodes
7.5 Dual-band detectors
7.6 Non-equilibrium HgCdTe photodiodes
7.7 MIS photodiodes
7.8 Schottky barrier photodiodes
7.9 Focal plane arrays
7.9.1 Hybrid FPAs
7.9.2 Monolithic FPAs
References

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CHAPTER 8.

HgZnTe and HgMnTe Photodiodes

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8.1 HgZnTe photodiodes
8.2 HgMnTe photodiodes
References

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CHAPTER 9.

Lead Salt Photodiodes

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9.1 Photodiode performance
9.2 Technology and properties of p–n junction photodiodes
9.2.1 Diffused photodiodes
9.2.2 Ion implantation
9.2.3 Heterojunctions
9.3 Schottky-barrier photodiodes
9.4 Unconventional thin film photodiodes
9.5 Lead salts FPAs
References

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CHAPTER 10.

Superlattice Photodiodes

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10.1 Superlattices—background
10.1.1 Confined electrons in relation to the quantum well
10.1.2 Classification of multiple quantum wells and superlattices
10.1.3 Superlattices for obtaining long wavelength absorption
10.2 HgTe/CdTe superlattice photodiodes
10.3 Strained layer superlattice photodiodes
10.3.1 InAsSb/InSb SLS photodiodes
10.3.2 InAs/GaInSb SLS photodiodes
References

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Back Matter

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