Efficient simulation of extreme ultraviolet multilayer defects with rigorous data base approach

Peter Evanschitzky; Feng Shao; Andreas Erdmann

doi:10.1117/1.JMM.12.2.021005

1 March 2013 Efficient simulation of extreme ultraviolet multilayer defects with rigorous data base approach

Peter Evanschitzky, Feng Shao, Andreas Erdmann

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 12, Issue 2, 021005 (March 2013). https://doi.org/10.1117/1.JMM.12.2.021005

Abstract

This paper presents the extension of the well-established, rigorous, electromagnetic field solver waveguide for the efficient and fully rigorous simulation of patterned extreme ultraviolet (EUV) masks with multilayer defects. The new simulation method uses a rigorously computed multilayer defect data base in combination with on demand modeling of diffraction from absorber structures. Typical computation times are in the range of seconds to a few minutes. Selected simulation examples, including a defect printing exploration and a defect repair, demonstrate the functionality and the capability to perform fast, highly accurate, and flexible EUV multilayer defect computations.

Citation Download Citation

Peter Evanschitzky, Feng Shao, and Andreas Erdmann "Efficient simulation of extreme ultraviolet multilayer defects with rigorous data base approach," Journal of Micro/Nanolithography, MEMS, and MOEMS 12(2), 021005 (1 March 2013). https://doi.org/10.1117/1.JMM.12.2.021005

Published: 1 March 2013

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