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30 August 2013 Propagation of surface topography of extreme ultraviolet blank substrate through multilayer and impact of phase defect structure on wafer image
Tsuyoshi Amano, Tsuneo Terasawa
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J. of Micro/Nanolithography, MEMS, and MOEMS, 12(3), 033015 (2013). https://doi.org/10.1117/1.JMM.12.3.033015
Abstract
Our recent study reveals that the propagation of a phase defect (PD) from an extreme ultraviolet mask substrate surface through a multilayer does not always propagate in a vertical direction. To fully understand the propagation model of PDs, two types of defects on a quartz (Qz) substrate are prepared. One is space patterns fabricated by a mask patterning process followed by an etching giving a cross-sectional angle of 90 deg. The others are atomic force microscopy scratched space patterns with their cross-sectional angles as 30 deg and 60 deg. After coating a patterned Qz substrate with a multilayer, propagation of PDs through the multilayer was observed by a transmit electron microscope (TEM). As a result, the TEM images clearly exhibit a tendency that originates from the Qz substrate while the PDs propagate through the multilayer and their propagation path is inclined toward the center of the mask. The impacts of the inclination angles on the printed images on a wafer are calculated using a simulator. A PD with an inclination angle of 1 deg corresponds to a positional shift of 1 nm on a printed wafer image.
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Tsuyoshi Amano and Tsuneo Terasawa "Propagation of surface topography of extreme ultraviolet blank substrate through multilayer and impact of phase defect structure on wafer image," Journal of Micro/Nanolithography, MEMS, and MOEMS 12(3), 033015 (30 August 2013). https://doi.org/10.1117/1.JMM.12.3.033015
Published: 30 August 2013
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