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16 February 2016 Accurate, full-chip, three-dimensional electromagnetic field model for non-Manhattan mask corners
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Abstract
The physical process of mask manufacturing produces absorber geometry with significant deviations from the 90-deg corners, which are typically assumed in the mask design. The non-Manhattan mask geometry is an essential contributor to the aerial image and resulting patterning performance through focus. Current state-of-the-art models for corner rounding employ “chopping” a 90-deg mask corner, replacing the corner with a small 45-deg edge. A methodology is presented to approximate the impact of three-dimensional (3-D) EMF effects introduced by corners with rounded edges. The approach is integrated into a full-chip 3-D mask simulation methodology based on the domain decomposition method with edge to edge crosstalk correction.
Michael C. Lam, Chris Clifford, Mike Oliver, David Fryer, Edita Tejnil, and Kostas Adam "Accurate, full-chip, three-dimensional electromagnetic field model for non-Manhattan mask corners," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(2), 021204 (16 February 2016). https://doi.org/10.1117/1.JMM.15.2.021204
Published: 16 February 2016
JOURNAL ARTICLE
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