Accurate, full-chip, three-dimensional electromagnetic field model for non-Manhattan mask corners

Michael  C. Lam; Chris Clifford; Mike Oliver; David Fryer; Edita Tejnil; Kostas Adam

doi:10.1117/1.JMM.15.2.021204

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16 February 2016 Accurate, full-chip, three-dimensional electromagnetic field model for non-Manhattan mask corners

Michael C. Lam, Chris Clifford, Mike Oliver, David Fryer, Edita Tejnil, Kostas Adam

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J. of Micro/Nanolithography, MEMS, and MOEMS, 15(2), 021204 (2016). https://doi.org/10.1117/1.JMM.15.2.021204

Abstract

The physical process of mask manufacturing produces absorber geometry with significant deviations from the 90-deg corners, which are typically assumed in the mask design. The non-Manhattan mask geometry is an essential contributor to the aerial image and resulting patterning performance through focus. Current state-of-the-art models for corner rounding employ “chopping” a 90-deg mask corner, replacing the corner with a small 45-deg edge. A methodology is presented to approximate the impact of three-dimensional (3-D) EMF effects introduced by corners with rounded edges. The approach is integrated into a full-chip 3-D mask simulation methodology based on the domain decomposition method with edge to edge crosstalk correction.

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Michael C. Lam, Chris Clifford, Mike Oliver, David Fryer, Edita Tejnil, and Kostas Adam "Accurate, full-chip, three-dimensional electromagnetic field model for non-Manhattan mask corners," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(2), 021204 (16 February 2016). https://doi.org/10.1117/1.JMM.15.2.021204

Published: 16 February 2016

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