Effect of oxygen-doping concentration on electrical properties of silicon oxycarbide films for memory application

Da Chen; Shihua Huang

doi:10.1117/1.JMM.15.3.035005

28 September 2016 Effect of oxygen-doping concentration on electrical properties of silicon oxycarbide films for memory application

Da Chen, Shihua Huang

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 15, Issue 3, 035005 (September 2016). https://doi.org/10.1117/1.JMM.15.3.035005

Abstract

We first investigate the effect of oxygen-doping concentration on resistive switching (RS) behaviors in SiC_xO_y, which were prepared by a radio frequency magnetron sputtering at the oxygen partial pressure ranging from 0% to 6%. Bipolar RS behaviors were achieved in all the fabricated devices and all these devices are valence change memories. With the oxygen partial pressure increasing from 0% to 6% (sample-0% has 40 at. % of oxygen), the mean R_HR_S increases from 4.5 to 64.8 MΩ and then decreases to 1.5 MΩ, indicating that the device exhibits the largest ON/OFF ratio ∼500 at the oxygen partial pressure of about 2%. Based on the analyses of x-ray photoelectron spectroscopy, fitting current–voltage curves, and resistance–temperature measurements, it is clear that the trap filled limit space charge limited current and a Schottky barrier in the interface of the SiC_xO_y film and p+-Si are suggested to be dominant in the positive and negative biases, respectively. Most importantly, all devices can keep the data more than 10⁴ s and endure more than 10² continuous cycles, thus confirming the nonvolatile properties.

Citation Download Citation

Da Chen and Shihua Huang "Effect of oxygen-doping concentration on electrical properties of silicon oxycarbide films for memory application," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(3), 035005 (28 September 2016). https://doi.org/10.1117/1.JMM.15.3.035005

Published: 28 September 2016

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