High-precision CD measurement using energy-filtering SEM techniques

Daisuke Bizen; Makoto Sakakibara; Makoto Suzuki; Yoshinori Momonoi; Hajime Kawano

doi:10.1117/1.JMM.16.2.024004

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29 June 2017 High-precision CD measurement using energy-filtering SEM techniques

Daisuke Bizen, Makoto Sakakibara, Makoto Suzuki, Yoshinori Momonoi, Hajime Kawano

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J. of Micro/Nanolithography, MEMS, and MOEMS, 16(2), 024004 (2017). https://doi.org/10.1117/1.JMM.16.2.024004

Abstract

Voltage contrast (VC) images obtained using an energy filter (EF) were used to measure the bottom surface of high-aspect-ratio structures. The VC images obtained using the conventional EF were sensitive to variations in wafer potential. Since CD-SEM metrology requires precise EF voltage control when using VC images, we developed an EF voltage correction method to be used at each measurement point. Consequently, bottom-edge measurement, independent of the wafer potential fluctuations, was achieved using the newly developed EF. Our developed technique is effective for CD-SEM metrology using VC images.

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Daisuke Bizen, Makoto Sakakibara, Makoto Suzuki, Yoshinori Momonoi, and Hajime Kawano "High-precision CD measurement using energy-filtering SEM techniques," Journal of Micro/Nanolithography, MEMS, and MOEMS 16(2), 024004 (29 June 2017). https://doi.org/10.1117/1.JMM.16.2.024004

Received: 5 April 2017; Accepted: 12 June 2017; Published: 29 June 2017

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KEYWORDS

Virtual colonoscopy

Scanning electron microscopy

Metrology

Semiconducting wafers

Image filtering

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