Open Access
27 February 2019 Optimization of defect compensation for extreme ultraviolet lithography mask by covariance-matrix-adaption evolution strategy (Erratum)
Heng Zhang, Sikun Li, Xiangzhao Wang, Chaoxing Yang, Wei Cheng
Author Affiliations +
Abstract
This erratum corrects mistakes in the original paper.

This article [J. Micro/Nanolith. MEMS MOEMS 17(4), 043505 (2018), doi: 10.1117/1.JMM.17.4.043505] was originally published online on 3 December 2018 with an error in the caption of Fig. 25. The figure caption appeared incorrectly as “Convergence curves of GA and CMA-ES for optimization of larger and complex mask pattern.” It has been corrected to: “Convergence curves of CMA-ES for optimization of larger and complex mask pattern.”

Also, there was an error in the parameter settings listed in Sec. 3.5. The sentence: “As shown by the purple circle in Fig. 24, the defect is positioned near a corner of an S-shaped pattern feature, and the defect parameters, xpos, ypos, htop, wtop, hbot, and wbot, are set as 50, 65, 9, 27, 8, and 35, respectively” has been corrected to: “As shown by the purple circle in Fig. 24, the defect is positioned near a corner of an S-shaped pattern feature, and the defect parameters, xpos, ypos, htop, wtop, hbot, and wbot, are set as 36, 108, 8, 35, 50, 65, respectively.”

All online versions of the article were corrected on 21 February 2019.

© 2019 Society of Photo-Optical Instrumentation Engineers (SPIE)
Heng Zhang, Sikun Li, Xiangzhao Wang, Chaoxing Yang, and Wei Cheng "Optimization of defect compensation for extreme ultraviolet lithography mask by covariance-matrix-adaption evolution strategy (Erratum)," Journal of Micro/Nanolithography, MEMS, and MOEMS 18(1), 019801 (27 February 2019). https://doi.org/10.1117/1.JMM.18.1.019801
Published: 27 February 2019
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KEYWORDS
Photomasks

Extreme ultraviolet lithography

Lithium

EUV optics

Mechanics

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