Fabrication of high-fill-factor photonic crystal devices on silicon-on-insulator substrates

Sriram Venkataraman; Janusz A. Murakowski; Thomas N. Adam; James Kolodzey; Dennis W. Prather

doi:10.1117/1.1610477

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1 October 2003 Fabrication of high-fill-factor photonic crystal devices on silicon-on-insulator substrates

Sriram Venkataraman, Janusz A. Murakowski, Thomas N. Adam, James Kolodzey, Dennis W. Prather

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J. of Micro/Nanolithography, MEMS, and MOEMS, 2(4), (2003). https://doi.org/10.1117/1.1610477

Abstract

Optimization of the photonic bandgap in finite-height photonic crystal (PhC) slab structures requires high-fill-factor lattices. We present a method for fabrication of high-fill-factor PhC devices in silicon-on-insulator (SOI) substrates using electron-beam lithography and high-aspect-ratio reactive-ion etching (RIE). We achieve 8:1 aspect-ratio PhC structures with 60-nm vertical membrane walls using a custom deep reactive-ion etching process in a conventional low-end RIE with patterned resist as the only etch mask. We present examples of various PhC devices fabricated using this method including a high-efficiency coupling structure for PhC waveguides.

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Sriram Venkataraman, Janusz A. Murakowski, Thomas N. Adam, James Kolodzey, and Dennis W. Prather "Fabrication of high-fill-factor photonic crystal devices on silicon-on-insulator substrates," Journal of Micro/Nanolithography, MEMS, and MOEMS 2(4), (1 October 2003). https://doi.org/10.1117/1.1610477

Published: 1 October 2003

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