Porous silica frame for deep ultraviolet lithography

D. Laurence Meixner; Rahul Ganguli; Troy Robinson; De-Yin Jeng; Mark W. Morris; Satyabrata Ray Chaudhuri; Brian J. Grenon

doi:10.1117/1.1758949

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1 July 2004 Porous silica frame for deep ultraviolet lithography

D. Laurence Meixner, Rahul Ganguli, Troy Robinson, De-Yin Jeng, Mark W. Morris, Satyabrata Ray Chaudhuri, Brian J. Grenon

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J. of Micro/Nanolithography, MEMS, and MOEMS, 3(3), (2004). https://doi.org/10.1117/1.1758949

Abstract

Several significant technical issues are associated with the current anodized aluminum pellicle frame. These problems will become more acute as shorter wavelengths such as 193 and 157 nm become standard. For example, it is difficult to purge the pellicle space, and the nonporous nature of the aluminum frame can lead to pressure-induced film breakage during transport. In addition, the thermal expansion behavior of aluminum does not match that of the silica substrate, which can lead to pattern distortion or bending of a hard pellicle film. Proposed solutions such as a perforated silica frame or a porous Invar^TM frame may address some of these issues, but a complete solution has not been forthcoming. A porous silica frame technology based on sol-gel processing may eliminate concerns associated with the lack of porosity in the aluminum frame, as well as thermal expansion mismatch problems. Several additional advantages may also be realized, including the removal of organic contaminants from inside the pellicle space, filtration of particulate contaminants, and stability under aggressive cleaning. This approach to a porous silica frame may help enable a cost-effective route to more rapid commercialization of shorter-wavelength microlithographic processes.

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D. Laurence Meixner, Rahul Ganguli, Troy Robinson, De-Yin Jeng, Mark W. Morris, Satyabrata Ray Chaudhuri, and Brian J. Grenon "Porous silica frame for deep ultraviolet lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 3(3), (1 July 2004). https://doi.org/10.1117/1.1758949

Published: 1 July 2004

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