1 July 2005 Heat transfer improvement in quasi-monolithic integration technology
Mojtaba Joodaki, Guenter Kompa, Hartmut H. Hillmer, Rainer Kassing
Author Affiliations +
Abstract
Static thermal analyses for the earlier concept and the enhanced quasi-monolithic integration technology (QMIT) are performed in detail. The effects of several parameters such as the properties of the materials involved and different geometries in all possible structures are described. Simulation results confirm a very low thermal resistance for the enhanced QMIT structure and highlight its superiority to the earlier concept of QMIT structures. This leads to a longer lifetime, a higher reliability and a better performance of the packaging.
©(2005) Society of Photo-Optical Instrumentation Engineers (SPIE)
Mojtaba Joodaki, Guenter Kompa, Hartmut H. Hillmer, and Rainer Kassing "Heat transfer improvement in quasi-monolithic integration technology," Journal of Micro/Nanolithography, MEMS, and MOEMS 4(3), 033011 (1 July 2005). https://doi.org/10.1117/1.2008968
Published: 1 July 2005
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Transistors

Epoxies

Resistance

Gallium arsenide

Gold

Silicon

Field effect transistors

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