Dry etching for the correction of gap-induced blurring and improved pattern resolution in nanostencil lithography

J. Arcamone; A. Sanchez-Amores; Josep Montserrat; M. A. F. van de Boogaart; Juergen P. Brugger; Francesc Pérez-Murano

doi:10.1117/1.2435273

1 January 2007 Dry etching for the correction of gap-induced blurring and improved pattern resolution in nanostencil lithography

J. Arcamone, A. Sanchez-Amores, Josep Montserrat, M. A. F. van de Boogaart, Juergen P. Brugger, Francesc Pérez-Murano

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 6, Issue 1, 013005 (January 2007). https://doi.org/10.1117/1.2435273

Abstract

We present nanostencil lithography as a new and parallel nanopatterning technique for batch fabrication of micro/nanoelectromechanical systems (MEMS/NEMS) with high throughput and resolution. We use nanostencil lithography for the purpose of integrating nanomechanical resonators into complementary metal-oxide semiconductor (CMOS) circuits. When patterning nonflat substrates, which is the case of CMOS wafers, the gap between the nanostencil membrane and the surface induces a pattern blurring that constitutes an intrinsic limitation to the maximum achievable resolution. In our case, the lateral blurring is on the order of 150 nm on each side. We present here a remedy to this limitation that is based on a corrective dry etching step that removes the excess material and which recovers the designed pattern dimensions. As a demonstration, we succeed in the patterning of an entire 100-mm-diam wafer with nanomechanical devices having lateral dimensions in the range of 200 nm.

©(2007) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

J. Arcamone, A. Sanchez-Amores, Josep Montserrat, M. A. F. van de Boogaart, Juergen P. Brugger, and Francesc Pérez-Murano "Dry etching for the correction of gap-induced blurring and improved pattern resolution in nanostencil lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 6(1), 013005 (1 January 2007). https://doi.org/10.1117/1.2435273

Published: 1 January 2007

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available