Fabrication of continuous V-grooves with Si(110) sidewalls using TiO2 resist mask by anisotropic wet etching

Xiaoming Yu; Bingsen Zhang; Jing Guo; Huazhe Yang; Ying Zhang; Shimin Shen; Yang Qi

doi:10.1117/1.3074832

1 January 2009 Fabrication of continuous V-grooves with Si(110) sidewalls using TiO₂ resist mask by anisotropic wet etching

Xiaoming Yu, Bingsen Zhang, Jing Guo, Huazhe Yang, Ying Zhang, Shimin Shen, Yang Qi

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 8, Issue 1, 013012 (January 2009). https://doi.org/10.1117/1.3074832

Abstract

Modification for substrate surface morphology is a kind of effective technique for controlling thin film growth orientation. In this work, continuous V-grooves are fabricated on monocrystalline Si(100) substrate using TiO₂ resist mask by anisotropic wet etching. Influence of thickness of TiO₂ resist mask on etching patterns is investigated. The integrity and cross section of V-grooves are observed by laser scanning confocal microscope (LSCM) and scanning electronic microscopy (SEM), respectively. The floccules precipitating in V-grooves are verified by an energy dispersive spectrometer (EDS). Results indicate that the Si(100) substrate surface is modified to the array of V-grooves along the Si[010] direction with Si(110) sidewalls.

©(2009) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Xiaoming Yu, Bingsen Zhang, Jing Guo, Huazhe Yang, Ying Zhang, Shimin Shen, and Yang Qi "Fabrication of continuous V-grooves with Si(110) sidewalls using TiO₂ resist mask by anisotropic wet etching," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(1), 013012 (1 January 2009). https://doi.org/10.1117/1.3074832

Published: 1 January 2009

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