Stochastic modeling in lithography: autocorrelation behavior of catalytic reaction-diffusion systems

Chris A. Mack

doi:10.1117/1.3155516

1 April 2009 Stochastic modeling in lithography: autocorrelation behavior of catalytic reaction-diffusion systems

Chris A. Mack

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 8, Issue 2, 029701 (April 2009). https://doi.org/10.1117/1.3155516

Abstract

Reaction-diffusion chemical systems where the catalyst of the reaction is the only diffusing species are investigated. Here, the correlation length and Hurst roughness exponent are derived in one-, two-, and three-dimensional first-order catalytic reaction-diffusion problems. These results are relevant to many chemical systems, and in particular to chemically amplified photoresists used in semiconductor lithography, where the correlation length and Hurst exponent affect the line-edge roughness of sub-100-nm printed features.

©(2009) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Chris A. Mack "Stochastic modeling in lithography: autocorrelation behavior of catalytic reaction-diffusion systems," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(2), 029701 (1 April 2009). https://doi.org/10.1117/1.3155516

Published: 1 April 2009

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available