Stochastic modeling in lithography: use of dynamical scaling in photoresist development

Chris A. Mack

doi:10.1117/1.3158612

1 July 2009 Stochastic modeling in lithography: use of dynamical scaling in photoresist development

Chris A. Mack

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 8, Issue 3, 033001 (July 2009). https://doi.org/10.1117/1.3158612

Abstract

The concepts of dynamical scaling in the study of kinetic roughness are applied to the problem of photoresist development. Uniform, open-frame exposure and development of photoresist corresponds to the problem of quenched noise and the etching of random disordered media and is expected to fall in the Kadar-Parisi-Zhang (KPZ) universality class. To verify this expectation, simulations of photoresist development in 1+1 dimensions were carried out with random, uncorrelated noise added to an otherwise uniform development rate. The resulting roughness exponent α and the growth exponent β were found to match the 1+1 KPZ values exactly.

©(2009) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Chris A. Mack "Stochastic modeling in lithography: use of dynamical scaling in photoresist development," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(3), 033001 (1 July 2009). https://doi.org/10.1117/1.3158612

Published: 1 July 2009

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available