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Journal of Micro/Nanopatterning, Materials, and Metrology

Editor-in-Chief: Harry Levinson, HJL Lithography, USA

The Journal of Micro/Nanopatterning, Materials, and Metrology    (JM 3) publishes peer-reviewed papers on the core enabling technologies that address the patterning needs of the electronics industry. Formerly the Journal of Micro/Nanolithography, MEMS, and MOEMS, the journal’s key subject areas include the science, development, and practice of lithographic, computational, etch, and integration technologies. In this context the electronics industry includes but is not limited to integrated circuits and multichip modules, and advanced packaging with features in the submicron regime.

On the cover: The figure is from "Mitigating pattern collapse in high-resolution EUV lithography using the organic dry development rinse process" by Seonggil Heo et al. in Vol. 23, Issue 3.
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How to Submit a Manuscript

Regular papers: Submissions of regular papers are always welcome.

Special section papers: Open calls for papers are listed below. A cover letter indicating that the submission is intended for a particular special section should be included with the paper.

To submit a paper, please prepare the manuscript according to the journal guidelines and use the online submission systemLeaving site. All papers will be peer‐reviewed in accordance with the journal's established policies and procedures. Authors have the choice to publish with open access. 
Upcoming Special Sections
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Exposure Field Stitching in Semiconductor Lithography
High Numerical Aperture Exposure Tools and Lithography
List of Previously Published Special Sections
Exposure Field Stitching in Semiconductor Lithography
Publication Date
July-September 2025
Submission Deadline
31 January 2025
Submit a manuscript
Author guidelines
Guest Editors
Allen H. Gabor

IBM Research, USA
Allen.Gabor@ibm.com

Natalia Davydova

ASML, The Netherlands
natalia.davydova@asml.com

Call for papers

Field stitching in semiconductor lithography has been used for many decades to create products requiring an area greater than the maximum field size of the lithography tool being used to manufacture the product. Examples include creating large image sensors, full-wafer processors, and fundamental electron beam lithography, using a combination of stage and beam deflection techniques to create macroscopic chips from microscopic “fields” or “subfields.” Recently two semiconductor industry focus items, on opposite ends of lithographic scaling, have reignited the industry’s interest in stitching exposure fields together: creating extremely large die in packaging with heterogenous integration and the “half-field” exposure size enabled in high numerical aperture (high NA) EUV lithography. The term “stitching” is often used to describe both the combination of multiple exposure fields into a single functional pattern (field stitching) and creating contiguous electrical connections across the edge of these printed fields (feature stitching). Potential topics include but are not limited to:

  • Methods for minimizing stitched field overlay error
  • Imaging performance at the stitching boundary and the ways to quantify
  • OPC methodologies for printing feature across the stitch field interface
  • Design methodologies for using stitched fields
  • Kerf/scribe line designs for stitch field exposures
  • Methods for minimizing overlay error in a semiconductor build that utilizes both high NA EUV and full field tools
  • Reticle process implications including required performance at the edge of the image field to support stitching and methods for minimizing black border impact to features going across the stitch field interface

All papers will undergo the standard peer-review process for the Journal of Micro/Nanopatterning, Materials, andMetrology (JM3). Manuscripts should be submitted to SPIE according to the journal guidelines. A cover letter indicating that the submission is intended for this special section should be included. For more information, please contact the guest editors or jm3@spie.org.

High Numerical Aperture Exposure Tools and Lithography
Publication Date
January-March 2025
Submission Deadline
Closed
Submit a manuscript
Author guidelines
Special Section Editors
Jo Finders

ASML
The Netherlands
jo.finders@asml.com

Vivek Bakshi

EUV Litho, Inc.
United States
vivek.bakshi@euvlitho.com

Call for papers

High numerical aperture (NA) scanners allow continued extension of Moore’s law at 13.5 nm wavelength and come with various technical and economic challenges. In this special section, we explore the current and future challenges of high NA scanners at 2 nm node and beyond. As many of these topics have been addressed in some form over the past several years, in this special section we will bring a review of key technical topics. At this moment, the integration of the 0.55 NA system is in full progress. Therefore, this is also a unique opportunity to share early experimental work. Potential topics include but are not limited to:

  • High NA tool overview including light source
  • High NA optics, manufacturing challenges
  • Anamorph imaging in high NA lithography, stitching
  • Computational imaging aspects of high NA imaging
  • Overlay optimization using half field exposure tool
  • High NA resists – managing stochastics, high resolution, and low thickness.
  • High NA patterning challenges and double patterning
  • High NA metrology challenges
  • High NA mask writing, mask choices, and new materials
  • Metrology aspects of high NA imaging.

All papers will undergo the standard peer-review process for the Journal of Micro/Nanopatterning, Materials, and Metrology (JM3). Manuscripts should be submitted to SPIE according to the journal guidelines at http://spie.org/jm3. A cover letter indicating that the submission is intended for this special section should be included. For more information, please contact the guest editor or jm3@spie.org.

High NA Exposure Tool and Lithography
Published Special Sections

Metrology for EUV (October-December 2024)
Guest Editors: Patrick Naulleau and Gregg Gallatin

Patterning for Advanced Packaging (January-March 2024)
Guest Editors: Ken-ichiro Mori and Moshe Preil

Curvilinear Masks (three-part series: January-March 2024, April-June 2024, October-December 2024)
Guest Editors: Linyong (Leo) Pang and Danping Peng

Plasma Modeling and Feature Profile Simulation (October-December 2023)
Guest Editors: Catherine B. Labelle and Mark J. Kushner

Control of Integrated Circuit Patterning Variance, Part 5: Pattern Placement, Critical Dimension, and Edge-to-Edge Overlay (October-December 2023)
Guest Editor: Alexander Starikov

Direct Write Lithography (October-December 2023)
Guest Editors: Stephen Renwick and Laurent Pain

3D Semiconductor Metrology (July-September 2023)
Guest Editors: Ndubuisi George Orji and Qinghuang Lin

Advances in E-Beam Metrology (April-June 2023)
Guest Editors: Gian Francesco Lorusso and Chris A. Mack

Manufacturing Data Analytics (October-December 2022)
Guest Editors: Bertrand Le-Gratiet and Serap Savari

Non-Chemically Amplified Resists for EUV Lithography (October-December 2022)
Guest Editors: Anuja De Silva and Yasin Ekinci

Next Generation Light Source, Materials, and Metrology/Inspection Equipment (April-June 2022)
Guest Editors: Erik R. Hosler and Brennan Peterson

Novel Patterning Technologies II (January-March 2022)
Guest Editors: Doug Resnick and Eric Panning

Deep Learning for Lithography and Photomask Applications (October-December 2021)
Guest Editor: Leo Pang

Masks and Lithography in the Era of Multi-beam Mask Writers (October-December 2021)
Guest Editors: Alan Brodie and Martha Sanchez

EUV Masks (three-part series, October-December 2020, April-June 2021, July-September 2021)
Guest Editors: Martin Burkhardt and Vicky Philipsen

Control of Integrated Circuit Patterning Variance, Part 4: Placement and Critical Dimension, Edge to Edge Overlay (April-June 2019)
Guest Editor: Alexander Starikov

Challenges and Approaches to EUV-Based Patterning for High-Volume Manufacturing Applications (January-March 2019)
Guest Editors: Sebastian Engelmann, Rich Wise, Roel Gronheid, and Nelson Felix

Control of Integrated Circuit Patterning Variance, Part 3: Pattern Roughness, Local Uniformity, and Stochastic Defects (October-December 2018)
Guest Editors: John C. Robinson, Tim Brunner, Gian Lorusso

Novel Patterning Technologies (July-September 2018)
Guest Editors: Eric Panning and Martha Sanchez

EUV Lithography for the 3-nm Node and Beyond (October-December 2017)
Guest Editors: Vivek Bakshi, Hakaru Mizoguchi, Ted Liang, Andrew Grenville, and Jos Benschop

Alternative Lithographic Technologies V (July-September 2016)
Guest Editors: Chris Bencher and Ricardo Ruiz

Control of Integrated Circuit Patterning Variance, Part 2: Image Placement, Device Overlay, and Critical Dimension (April-June 2016)
Guest Editor: Alexander Starikov

Photomask Manufacturing Technology (April-June 2016)
Guest Editors: Masato Shibuya, Morihisa Hoga, and Kiwamu Takehisa

Extending VLSI and Alternative Technology with Optical and Complementary Lithography (April-June 2016)
Guest Editors: Kafai Lai and Andreas Erdmann

On the Interface of Holography and MEMS (October-December 2015)
Guest Editors: Partha Banerjee, Pierre-Alexandre Blanche, Christophe Moser, and Myung K. Kim

Alternative Lithographic Technologies IV (July-September 2015)
Guest Editors: Douglas J. Resnick, Ricardo Ruiz, and Hans Loeschner

Control of Integrated Circuit Patterning Variance Part 1: Metrology, Process Monitoring, and Control of Critical Dimension (April-June 2015)
Guest Editors: Alexander Starikov and Matthew Sendelbach

Continuation of Scaling with Optical and Complementary Lithography (January-March 2015)
Guest Editors: Kafai Lai and Andreas Erdmann

Holistic/Hybrid Metrology (October-December 2014)
Guest Editors: Alok Vaid and Eric Solecky

Alternative Lithographic Technologies III (July-September 2014)
Guest Editors: Douglas J. Resnick, Christopher Bencher, and Ricardo Ruiz

Metrology and Inspection for 3-D Integrated Circuits and Interconnects (January-March 2014)
Guest Editors: Yi-sha Ku and Alexander Starikov

Emerging MOEMS Technology and Applications (January-March 2014)
Guest Editors: M. Edward Motamedi, Joel Kubby, Patrick Ian Oden, and Wibool Piyawattanametha

Optical Lithography Extension Beyond the 14-nm Node (January-March 2014)
Guest Editors: Will Conley and Kafai Lai

Advanced Fabrication of MEMS and Photonic Devices (October-December 2013)
Guest Editors: Georg von Freymann, Mary Ann Maher, and Thomas J. Suleski

Advanced Plasma-Etch Technology (October-December 2013)
Guest Editors: Ying Zhang, Qinghuang Lin, and Gottlieb S. Oehrlein

Alternative Lithographic Technologies (July-September 2013)
Guest Editors: Will Tong and Douglas J. Resnick

Photomasks for EUV Lithography (April-June 2013)
Guest Editors: Christopher J. Progler and Frank E. Abboud

Alternative Lithographic Technologies (July-September 2012)
Guest Editors: William M. Tong, Douglas J. Resnick, and Benjamin Rathsack

Directed Self-Assembly (July-September 2012)
Guest Editors: Daniel P. Sanders and William H. Arnold

Reliability, Packaging, Testing, and Characterization of MEMS and MOEMS III (April-June 2012)
Guest Editors: Sonia M. García-Blanco and Rajeshuni Ramesham

EUV Sources for Lithography (April-June 2012)
Guest Editors: Vivek Bakshi and Anthony Yen

Dimensional Metrology with Atomic Force Microscopy: Instruments and Applications (January-March 2012)
Guest Editors: Ronald Dixson and Ndubuisi G. Orji

Theory and Practice of MEMS, NEMS, and MOEMS (January-March 2011)
Guest Editor: Yu-Cheng Lin

Reliability, Packaging, Testing, and Characterization of MEMS and MOEMS II (October-December 2010)
Guest Editor: Rajeshuni Ramesham

Line-Edge Roughness (October-December 2010 )
Guest Editors: Chris A. Mack and Will Conley

Metrology (October-December 2010 )
Guest Editors: Moshe Preil and Shaunee Cheng

BioMEMS, Theory and Practice of MEMS/NEMS, and Sensors (July-September 2010)
Guest Editor: Yu-Cheng Lin

Extreme-Ultraviolet Lithography (October-December 2009)
Guest Editors: Kevin Cummings and Kazuaki Suzuki

Reliability, Packaging, Testing, and Characterization of MEMS and MOEMS (July-September 2009)
Guest Editors: Rajeshuni Ramesham and Allyson L. Hartzell

Computational Lithography (July-September 2009)
Guest Editors: Donis Flagello and Chris Mack

Theory and Practice of MEMS/NEMS/MOEMS, RF MEMS, and BioMEMS (April-June 2009)
Guest Editor: Yu-Cheng Lin

Extreme-Ultraviolet Interference Lithography (April-June 2009)
Guest Editor: Franco Cerrina

Double-Patterning Lithography (January-March 2009)
Guest Editor: William H. Arnold

Silicon-Based MOEMS and Their Applications (April-June 2008)
Guest Editors: Harald Schenk and Wibool Piyawattanametha

Resolution Enhancement Techniques and Design for Manufacturability (July-September 2007)
Guest Editor: Alfred K. K. Wong

Bio-MEMS and Microfluidics (April-June 2006)
Guest Editors: Wanjun Wang and Ian Papautsky

Nanopatterning (January-March 2006)
Guest Editors: Kees Eijkel, Jill Hruby, Glen Kubiak, M. Scott, Volker Saile, and Steven Walsh

MOEMS Design, Technology, and Applications (October-December 2005)
Guest Editor: M. Edward Motamedi

Polarization and Hyper-NA Lithography (July-September 2005)
Guest Editor: Donis Flagello and Christopher J. Progler

Next Generation Lithography (January-March 2005)
Guest Editor: Walt Trybula

Mask Technology for Optical Lithography (April-June 2004)
Guest Editor: Kevin D. Cummings and Frank M. Schellenberg

Immersion Lithography (January-March 2004)
Guest Editor: William H. Arnold

Surface Micromachining (October-December 2003)
Guest Editors: Jeffry J. Sniegowski and James H. Smith

Micro-Optics for Photonic Networks (October-December 2003)
Guest Editor: Thomas J. Suleski

Lithography for Sub-100-nm Device Fabrication (October-December 2002)
Guest Editor: William H. Arnold

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