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1 January 2011 Fabrication of polynomial 3-D nanostructures in Si with a single-step process
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This work demonstrated the ability to transfer a nanoscale 3-D polynomial structure of arbitrary shape into Si with a single step electron-beam lithography process. The technique involved employing a proximity correction algorithm, PYRAMID, to derive the dose distribution for a given 3-D structure by accounting for the electron scattering effects of the surrounding pixels. The pattern was written into a polymethyl methacrylate (PMMA) resist and then successively transferred into Si via reactive ion etching, where a 1:1 etching ratio between PMMA and Si was achieved. The pattern transferred into Si possessed nanoscale features and matched the desired pattern with high fidelity.
Dong Liu, Shakib Morshed, Bo Zhou, Barton C. Prorok, and Soo-Young Lee "Fabrication of polynomial 3-D nanostructures in Si with a single-step process," Journal of Micro/Nanolithography, MEMS, and MOEMS 10(1), 010501 (1 January 2011).
Published: 1 January 2011

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