Fabrication of polynomial 3-D nanostructures in Si with a single-step process

Dong Liu; Shakib Morshed; Bo Zhou; Barton C. Prorok; Soo-Young Lee

doi:10.1117/1.3563601

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1 January 2011 Fabrication of polynomial 3-D nanostructures in Si with a single-step process

Dong Liu, Shakib Morshed, Bo Zhou, Barton C. Prorok, Soo-Young Lee

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J. of Micro/Nanolithography, MEMS, and MOEMS, 10(1), 010501 (2011). https://doi.org/10.1117/1.3563601

Abstract

This work demonstrated the ability to transfer a nanoscale 3-D polynomial structure of arbitrary shape into Si with a single step electron-beam lithography process. The technique involved employing a proximity correction algorithm, PYRAMID, to derive the dose distribution for a given 3-D structure by accounting for the electron scattering effects of the surrounding pixels. The pattern was written into a polymethyl methacrylate (PMMA) resist and then successively transferred into Si via reactive ion etching, where a 1:1 etching ratio between PMMA and Si was achieved. The pattern transferred into Si possessed nanoscale features and matched the desired pattern with high fidelity.

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Dong Liu, Shakib Morshed, Bo Zhou, Barton C. Prorok, and Soo-Young Lee "Fabrication of polynomial 3-D nanostructures in Si with a single-step process," Journal of Micro/Nanolithography, MEMS, and MOEMS 10(1), 010501 (1 January 2011). https://doi.org/10.1117/1.3563601

Published: 1 January 2011

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